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Advance Technical Information
High Current
Power MOSFET
IXTH 48N15
IXTT 48N15
V DSS
I D25
R DS(on)
= 150 V
= 48 A
= 32 m ?
N-Channel Enhancement Mode
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXTH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
150
150
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
± 20
± 30
48
192
48
30
V
V
A
A
A
mJ
TO-268 (IXTT) Case Style
(TAB)
E AS
dv/dt
P D
T J
T JM
T stg
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
1.0
5
180
-55 ... +150
150
-55 ... +150
J
V/ns
W
° C
° C
° C
G = Gate
S = Source
Features
G
S
D = Drain
TAB = Drain
(TAB)
T L
1.6 mm (0.062 in.) from case for 10 s
300
° C
q
International standard packages
M d
Weight
Mounting torque
TO-247 AD
TO-268
1.13/10 Nm/lb.in.
6 g
4 g
q
q
q
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
V DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
150 V
Advantages
q
q
V GS(th)
V DS = V GS , I D = 250μ A
2.0
4.0
V
q
High power density
I GSS
V GS = ± 20 V DC , V DS = 0
± 100
nA
I DSS
V DS = V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
25
250
μ A
μ A
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
32
m ?
? 2002 IXYS All rights reserved
98926-A (10/02)
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